PART |
Description |
Maker |
HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44 16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44 Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50 DB25PH 16兆位同步DRAM 16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group SIEMENS AG
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S1 |
2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
IS42SM32100C IS42RM32100C-6BLI |
512K x32Bits x2Banks Low Power Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
H57V2582GTR-60C H57V2582GTR-60L H57V2582GTR-75C H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
HY57V561620 HY57V561620LT-8 HY57V561620LT-P HY57V5 |
4Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
|
M12L2561616A-7TG |
4M x 16 Bit x 4 Banks Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
|
Micron Technology, Inc.
|
UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45 |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
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